Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > XPN6R706NC,L1XHQ
XPN6R706NC,L1XHQ

XPN6R706NC,L1XHQ Toshiba Semiconductor and Storage

Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.02 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details XPN6R706NC,L1XHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 40A 8TSON, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-TSON Advance-WF (3.1x3.1), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Power Dissipation (Max): 840mW (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Part Status: Active.

Weitere Produktangebote XPN6R706NC,L1XHQ nach Preis ab 1.09 EUR bis 3.81 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
XPN6R706NC,L1XHQ XPN6R706NC,L1XHQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 60V 40A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 27960 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.81 EUR
10+2.43 EUR
100+1.63 EUR
500+1.3 EUR
1000+1.19 EUR
2000+1.09 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XPN6R706NC,L1XHQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
XPN6R706NC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 27960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.81 EUR
10+2.43 EUR
100+1.63 EUR
500+1.3 EUR
1000+1.19 EUR
2000+1.09 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH