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XPN7R104NC,L1XHQ

XPN7R104NC,L1XHQ Toshiba Semiconductor and Storage

docget.jsp?did=68660&prodName=XPN7R104NC Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.75 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details XPN7R104NC,L1XHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 20A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V, Power Dissipation (Max): 840mW (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 200µA, Supplier Device Package: 8-TSON Advance-WF (3.1x3.1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V.

Weitere Produktangebote XPN7R104NC,L1XHQ nach Preis ab 0.78 EUR bis 2.9 EUR

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XPN7R104NC,L1XHQ XPN7R104NC,L1XHQ Hersteller : Toshiba XPN7R104NC_datasheet_en_20200624-1840199.pdf MOSFETs 65W 1MHz Automotive; AEC-Q101
auf Bestellung 2537 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.62 EUR
10+1.44 EUR
100+1.03 EUR
500+0.84 EUR
1000+0.78 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
XPN7R104NC,L1XHQ XPN7R104NC,L1XHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=68660&prodName=XPN7R104NC Description: MOSFET N-CH 40V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
auf Bestellung 11842 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.9 EUR
10+1.85 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.9 EUR
2000+0.83 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH