XPQ1R004PB,LXHQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: 40V U-MOS IX-H L-TOGL 1.0MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 1.99 EUR |
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Technische Details XPQ1R004PB,LXHQ Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 3V @ 500µA, Supplier Device Package: L-TOGL™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote XPQ1R004PB,LXHQ nach Preis ab 2.20 EUR bis 5.91 EUR
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XPQ1R004PB,LXHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: L-TOGL™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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