XPQ1R004PB,LXHQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Supplier Device Package: L-TOGL™
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
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Technische Details XPQ1R004PB,LXHQ Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM, Qualification: AEC-Q101, Grade: Automotive, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerBSFN, Packaging: Tape & Reel (TR), Supplier Device Package: L-TOGL™, Vgs(th) (Max) @ Id: 3V @ 500µA, Power Dissipation (Max): 230W (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active.
Weitere Produktangebote XPQ1R004PB,LXHQ nach Preis ab 2.2 EUR bis 5.91 EUR
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XPQ1R004PB,LXHQ | Toshiba Semiconductor and Storage |
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: L-TOGL™ Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerBSFN Vgs(th) (Max) @ Id: 3V @ 500µA Power Dissipation (Max): 230W (Tc) Packaging: Cut Tape (CT) |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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| XPQ1R004PB,LXHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: L-TOGL™
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 230W (Tc)
Packaging: Cut Tape (CT)
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: L-TOGL™
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 230W (Tc)
Packaging: Cut Tape (CT)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 5.91 EUR |
| 10+ | 3.86 EUR |
| 100+ | 2.7 EUR |
| 500+ | 2.2 EUR |