auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.2 EUR |
| 10+ | 6.76 EUR |
| 100+ | 6.27 EUR |
| 1500+ | 5.47 EUR |
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Technische Details XPQR8308QB,LXHQ Toshiba
Description: 80V UMOS10 L-TOGL 0.83MOHM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350A (Ta), Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V, Power Dissipation (Max): 750W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3.2mA, Supplier Device Package: L-TOGL™, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote XPQR8308QB,LXHQ nach Preis ab 3.87 EUR bis 10 EUR
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XPQR8308QB,LXHQ | Hersteller : Toshiba Semiconductor and Storage |
 Description: 80V UMOS10 L-TOGL 0.83MOHMPackaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350A (Ta) Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.2mA Supplier Device Package: L-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 1052 Stücke: Lieferzeit 10-14 Tag (e) |
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XPQR8308QB,LXHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: 80V UMOS10 L-TOGL 0.83MOHM Packaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350A (Ta) Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.2mA Supplier Device Package: L-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V Qualification: AEC-Q101 |
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