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XPQR8308QB,LXHQ

XPQR8308QB,LXHQ Toshiba


XPQR8308QB_datasheet_en_20230616-3507468.pdf Hersteller: Toshiba
MOSFETs LTOGL N CHAN 80V
auf Bestellung 67 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.20 EUR
10+6.76 EUR
100+6.27 EUR
1500+5.47 EUR
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Technische Details XPQR8308QB,LXHQ Toshiba

Description: 80V UMOS10 L-TOGL 0.83MOHM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350A (Ta), Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V, Power Dissipation (Max): 750W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3.2mA, Supplier Device Package: L-TOGL™, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote XPQR8308QB,LXHQ nach Preis ab 3.87 EUR bis 10.00 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
XPQR8308QB,LXHQ XPQR8308QB,LXHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=152781&prodName=XPQR8308QB Description: 80V UMOS10 L-TOGL 0.83MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Ta)
Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.2mA
Supplier Device Package: L-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1052 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.00 EUR
10+6.57 EUR
25+5.68 EUR
100+4.67 EUR
250+4.18 EUR
500+3.87 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
XPQR8308QB,LXHQ XPQR8308QB,LXHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=152781&prodName=XPQR8308QB Description: 80V UMOS10 L-TOGL 0.83MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Ta)
Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.2mA
Supplier Device Package: L-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH