| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.76 EUR |
| 10+ | 8.04 EUR |
| 100+ | 7.46 EUR |
| 1500+ | 6.51 EUR |
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Technische Details XPQR8308QB,LXHQ Toshiba
Description: 80V UMOS10 L-TOGL 0.83MOHM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350A (Ta), Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V, Power Dissipation (Max): 750W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3.2mA, Supplier Device Package: L-TOGL™, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote XPQR8308QB,LXHQ nach Preis ab 4.61 EUR bis 11.9 EUR
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XPQR8308QB,LXHQ | Toshiba Semiconductor and Storage |
 Description: 80V UMOS10 L-TOGL 0.83MOHMPackaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350A (Ta) Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.2mA Supplier Device Package: L-TOGL™ Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 1052 Stücke: Lieferzeit 10-14 Tag (e) |
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| XPQR8308QB,LXHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: 80V UMOS10 L-TOGL 0.83MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Ta)
Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.2mA
Supplier Device Package: L-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V
Qualification: AEC-Q101
Description: 80V UMOS10 L-TOGL 0.83MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350A (Ta)
Rds On (Max) @ Id, Vgs: 0.83mOhm @ 175A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.2mA
Supplier Device Package: L-TOGL™
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24700 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1052 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.9 EUR |
| 10+ | 7.82 EUR |
| 25+ | 6.76 EUR |
| 100+ | 5.56 EUR |
| 250+ | 4.97 EUR |
| 500+ | 4.61 EUR |