XPW4R10ANB,L1XHQ Toshiba
| Anzahl | Preis |
|---|---|
| 1+ | 4.61 EUR |
| 10+ | 2.99 EUR |
| 100+ | 2.08 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.66 EUR |
| 2500+ | 1.62 EUR |
| 5000+ | 1.47 EUR |
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Technische Details XPW4R10ANB,L1XHQ Toshiba
Description: MOSFET N-CH 100V 70A AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-DSOP Advance, Vgs(th) (Max) @ Id: 3.5V @ 1mA, Power Dissipation (Max): 170W (Tc), Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote XPW4R10ANB,L1XHQ nach Preis ab 2.11 EUR bis 4.72 EUR
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XPW4R10ANB,L1XHQ | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 100V 70A AEC-Q101Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-DSOP Advance Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 70A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 124 Stücke: Lieferzeit 10-14 Tag (e) |
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| XPW4R10ANB,L1XHQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 70A AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 100V 70A AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.72 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.11 EUR |