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XPW4R10ANB,L1XHQ

XPW4R10ANB,L1XHQ Toshiba

XPW4R10ANB_datasheet_en_20201009-1994627.pdf Hersteller: Toshiba
MOSFETs POWER MOSFET TRANSISTOR DSOP Advance(WF)M PD=170W F=1MHZ
auf Bestellung 4840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.61 EUR
10+2.99 EUR
100+2.08 EUR
500+1.74 EUR
1000+1.66 EUR
2500+1.62 EUR
5000+1.47 EUR
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Technische Details XPW4R10ANB,L1XHQ Toshiba

Description: MOSFET N-CH 100V 70A AEC-Q101, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A, Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: 8-DSOP Advance, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote XPW4R10ANB,L1XHQ nach Preis ab 2.11 EUR bis 4.72 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
XPW4R10ANB,L1XHQ XPW4R10ANB,L1XHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=69940&prodName=XPW4R10ANB Description: MOSFET N-CH 100V 70A AEC-Q101
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.72 EUR
10+3.06 EUR
100+2.11 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
XPW4R10ANB,L1XHQ XPW4R10ANB,L1XHQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=69940&prodName=XPW4R10ANB Description: MOSFET N-CH 100V 70A AEC-Q101
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH