XPW6R30ANB,L1XHQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 1.59 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
5000 Stücke
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Produktbewertung abgeben
Technische Details XPW6R30ANB,L1XHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8DSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Supplier Device Package: 8-DSOP Advance, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V.
Weitere Produktangebote XPW6R30ANB,L1XHQ nach Preis ab 1.61 EUR bis 5.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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XPW6R30ANB,L1XHQ | Toshiba |
MOSFETs 132W 1MHz Automotive; AEC-Q101 |
auf Bestellung 4982 Stücke: Lieferzeit 10-14 Tag (e) |
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XPW6R30ANB,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 45A 8DSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V Power Dissipation (Max): 960mW (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 500µA Supplier Device Package: 8-DSOP Advance Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V |
auf Bestellung 5312 Stücke: Lieferzeit 10-14 Tag (e) |
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| XPW6R30ANB,L1XHQ |
|
Hersteller: Toshiba
MOSFETs 132W 1MHz Automotive; AEC-Q101
MOSFETs 132W 1MHz Automotive; AEC-Q101
auf Bestellung 4982 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.21 EUR |
| 10+ | 2.87 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.73 EUR |
| 1000+ | 1.62 EUR |
| XPW6R30ANB,L1XHQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Description: MOSFET N-CH 100V 45A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
auf Bestellung 5312 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.26 EUR |
| 10+ | 3.39 EUR |
| 100+ | 2.33 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.73 EUR |
| 2000+ | 1.61 EUR |