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XPW6R30ANB,L1XHQ

XPW6R30ANB,L1XHQ Toshiba Semiconductor and Storage

Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.34 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details XPW6R30ANB,L1XHQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 45A 8DSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Supplier Device Package: 8-DSOP Advance, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V.

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XPW6R30ANB,L1XHQ XPW6R30ANB,L1XHQ Hersteller : Toshiba XPW6R30ANB_datasheet_en_20200624-1858395.pdf MOSFETs 132W 1MHz Automotive; AEC-Q101
auf Bestellung 4982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.54 EUR
10+2.41 EUR
100+1.74 EUR
500+1.45 EUR
1000+1.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
XPW6R30ANB,L1XHQ XPW6R30ANB,L1XHQ Hersteller : Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 100V 45A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
auf Bestellung 5312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.42 EUR
10+2.85 EUR
100+1.96 EUR
500+1.58 EUR
1000+1.45 EUR
2000+1.35 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH