YJ12N65CZ YANGJIE TECHNOLOGY

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 11.5A; Idm: 46A; 240W; TO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 11.5A, Pulsed drain current: 46A, Power dissipation: 240W, Case: TO220AB, Gate-source voltage: ±20V, On-state resistance: 0.75Ω, Mounting: THT, Gate charge: 70nC, Kind of package: tube, Kind of channel: enhanced, Heatsink thickness: max. 1.33mm, Anzahl je Verpackung: 1 Stücke.