Produkte > YANGJIE TECHNOLOGY > YJD20N06A
YJD20N06A

YJD20N06A YANGJIE TECHNOLOGY

pVersion=0046&contRep=ZT&docId=005056AB82531EE98AC051ED743178BF&compId=YJD20N06A.pdf?ci_sign=91c09bed5fa8d478857e2a01b3eb701ea1d0f04e Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 60A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
275+0.26 EUR
325+0.22 EUR
400+0.18 EUR
425+0.17 EUR
2500+0.16 EUR
Mindestbestellmenge: 275
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details YJD20N06A YANGJIE TECHNOLOGY

Description: N-CH MOSFET 60V 20A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V.

Weitere Produktangebote YJD20N06A nach Preis ab 0.21 EUR bis 0.33 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
YJD20N06A YJD20N06A Hersteller : Yangjie Technology YJD20N06A.pdf Description: TO-252 N 60V 20A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 250000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.33 EUR
12500+0.31 EUR
25000+0.29 EUR
50000+0.27 EUR
100000+0.25 EUR
250000+0.23 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
YJD20N06A Hersteller : Yangjie Electronic Technology YJD20N06A.pdf N-Channel Enhancement Mode Field Effect Transistor
auf Bestellung 500000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.21 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
YJD20N06A YJD20N06A Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd YJD20N06A.pdf Description: N-CH MOSFET 60V 20A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
YJD20N06A YJD20N06A Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd YJD20N06A.pdf Description: N-CH MOSFET 60V 20A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH