Produkte > YANGJIE TECHNOLOGY > YJL2300A
YJL2300A

YJL2300A YANGJIE TECHNOLOGY

pVersion=0046&contRep=ZT&docId=005056AB82531EE98AC186682DC238BF&compId=YJL2300A.pdf?ci_sign=9bf64c4f3083cada6afd9f54472b5637bb2c37ab Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details YJL2300A YANGJIE TECHNOLOGY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 3.6A; 1W, Type of transistor: N-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 3.6A, Pulsed drain current: 18A, Power dissipation: 1W, Case: SOT23, Gate-source voltage: ±10V, On-state resistance: 49mΩ, Mounting: SMD, Gate charge: 4.2nC, Kind of package: reel; tape, Kind of channel: enhancement.