YJL2302B YY
Hersteller: YY
20V 3A 80mOhm@2.5V,2A 700mW 780mV 1 N-channel SOT-23(TO-236) MOSFETs ODPOWIEDNIK: IRLML2402TR; YJL2302B-F2-0000HF; YJL2302B; IRLML2402TR; IRLML2402; YJL2302B SOT23 YANGZHOU Yangjie Elec Tech TIRLML2402 YY
Anzahl je Verpackung: 3000 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.13 EUR |
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Technische Details YJL2302B YY
Description: N-CH MOSFET 20V 3A SOT-23-3L, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote YJL2302B
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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YJL2302B | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 20V 3A SOT-23-3L Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
YJL2302B | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 20V 3A SOT-23-3L Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| YJL2302B |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-23-3L
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: N-CH MOSFET 20V 3A SOT-23-3L
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| YJL2302B |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: N-CH MOSFET 20V 3A SOT-23-3L
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: N-CH MOSFET 20V 3A SOT-23-3L
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH