YJL2302B YY
Hersteller: YY20V 3A 80mOhm@2.5V,2A 700mW 780mV 1 N-channel SOT-23(TO-236) MOSFETs ODPOWIEDNIK: IRLML2402TR; YJL2302B-F2-0000HF; YJL2302B; IRLML2402TR; IRLML2402; YJL2302B SOT23 YANGZHOU Yangjie Elec Tech TIRLML2402 YY
Anzahl je Verpackung: 3000 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
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Technische Details YJL2302B YY
Description: N-CH MOSFET 20V 3A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V.
Weitere Produktangebote YJL2302B
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YJL2302B | Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 20V 3A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V |
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YJL2302B | Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 20V 3A SOT-23-3L Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V |
Produkt ist nicht verfügbar |