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YJL2312AQ

YJL2312AQ Yangjie Technology


Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 300000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.11 EUR
30000+0.1 EUR
60000+0.093 EUR
120000+0.084 EUR
300000+0.077 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details YJL2312AQ Yangjie Technology

Description: Transistors - FETs, MOSFETs - Si, Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1V @ 250µA, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.