YJL3400A YANGJIE TECHNOLOGY
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 23A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 20 Stücke
auf Bestellung 33720 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1140+ | 0.064 EUR |
1260+ | 0.057 EUR |
1660+ | 0.044 EUR |
1740+ | 0.041 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details YJL3400A YANGJIE TECHNOLOGY
Description: N-CH MOSFET 30V 5.6A SOT-23-3L, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V.
Weitere Produktangebote YJL3400A nach Preis ab 0.041 EUR bis 0.68 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
YJL3400A | Hersteller : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 23A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 51mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 33720 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
YJL3400A | Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 5.6A SOT-23-3L Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V |
auf Bestellung 363 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
YJL3400A | Hersteller : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 30V 5.6A SOT-23-3L Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.6A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V |
Produkt ist nicht verfügbar |