YJL3407AL

YJL3407AL YANGJIE TECHNOLOGY


pVersion=0046&contRep=ZT&docId=005056AB82531EE98AC23C0BC2DC18BF&compId=YJL3407AL.pdf?ci_sign=5cf4cb3fd4b8c39a55258ae084a93b116a2bc051 Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4380 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
890+0.081 EUR
1420+0.051 EUR
1670+0.043 EUR
1760+0.041 EUR
3000+0.04 EUR
Mindestbestellmenge: 890
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Technische Details YJL3407AL YANGJIE TECHNOLOGY

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W, Type of transistor: P-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -3.2A, Pulsed drain current: -15A, Power dissipation: 1.5W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 68mΩ, Mounting: SMD, Gate charge: 6.8nC, Kind of package: reel; tape, Kind of channel: enhancement.