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YJQ4666B YANGJIE TECHNOLOGY

Name: YJQ4666B
Brand: YANGJIE TECHNOLOGY
SKU: 29251695-8
Price: 71.89 EUR
Availability: InStock

Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -16V
Drain current: -5.6A
Pulsed drain current: -28A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement

auf Bestellung 1500 Stücke:

Lieferzeit 14-21 Tag (e)

Anzahl	Preis
910+	0.079 EUR
1180+	0.061 EUR
1290+	0.056 EUR

Mindestbestellmenge: 910

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Technische Details YJQ4666B YANGJIE TECHNOLOGY

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W, Type of transistor: P-MOSFET, Technology: TRENCH POWER LV, Polarisation: unipolar, Drain-source voltage: -16V, Drain current: -5.6A, Pulsed drain current: -28A, Power dissipation: 2.2W, Case: DFN2020-6, Gate-source voltage: ±10V, On-state resistance: 60mΩ, Mounting: SMD, Gate charge: 7.2nC, Kind of package: reel; tape, Kind of channel: enhancement.