ZHB6792TA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
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Technische Details ZHB6792TA Diodes Incorporated
Description: TRANS 2NPN/2PNP 70V 1A SM8, Packaging: Tape & Reel (TR), Package / Case: SOT-223-8, Mounting Type: Surface Mount, Transistor Type: 2 NPN, 2 PNP (H-Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.25W, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 70V, Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: SM8.
Weitere Produktangebote ZHB6792TA nach Preis ab 2.01 EUR bis 6.2 EUR
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ZHB6792TA | Diodes Incorporated |
Bipolar Transistors - BJT H-Bridge-70V |
auf Bestellung 1028 Stücke: Lieferzeit 10-14 Tag (e) |
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ZHB6792TA | Diodes Incorporated |
Description: TRANS 2NPN/2PNP 70V 1A SM8 Packaging: Cut Tape (CT) Package / Case: SOT-223-8 Mounting Type: Surface Mount Transistor Type: 2 NPN, 2 PNP (H-Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 70V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SM8 |
auf Bestellung 12628 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZHB6792TA |
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auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| ZHB6792TA |
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Hersteller: Diodes Incorporated
Bipolar Transistors - BJT H-Bridge-70V
Bipolar Transistors - BJT H-Bridge-70V
auf Bestellung 1028 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.07 EUR |
| 10+ | 3.96 EUR |
| 100+ | 2.76 EUR |
| 500+ | 2.39 EUR |
| 1000+ | 2.03 EUR |
| 2000+ | 2.01 EUR |
| ZHB6792TA |
|
Hersteller: Diodes Incorporated
Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Cut Tape (CT)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
Description: TRANS 2NPN/2PNP 70V 1A SM8
Packaging: Cut Tape (CT)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP (H-Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 70V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SM8
auf Bestellung 12628 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.2 EUR |
| 10+ | 4.05 EUR |
| 100+ | 2.82 EUR |
| 500+ | 2.3 EUR |