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Technische Details ZVN2110ASTZ Diodes Zetex
Description: DIODES INC. - ZVN2110ASTZ - Leistungs-MOSFET, n-Kanal, 100 V, 320 mA, 4 ohm, TO-92, Durchsteckmontage, tariffCode: 85411000, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 320mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.4V, euEccn: NLR, Verlustleistung: 700mW, Bauform - Transistor: TO-92, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 4ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote ZVN2110ASTZ nach Preis ab 0.41 EUR bis 2.15 EUR
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ZVN2110ASTZ | Diodes Incorporated |
 Description: MOSFET N-CH 100V 320MA E-LINEPackaging: Tape & Box (TB) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN2110ASTZ | Diodes Incorporated |
MOSFETs N-Chnl 100V |
auf Bestellung 4429 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN2110ASTZ | Diodes Incorporated |
Description: MOSFET N-CH 100V 320MA E-LINE Packaging: Cut Tape (CT) Package / Case: E-Line-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: E-Line (TO-92 compatible) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V |
auf Bestellung 25642 Stücke: Lieferzeit 10-14 Tag (e) |
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ZVN2110ASTZ | DIODES INC. |
Description: DIODES INC. - ZVN2110ASTZ - Leistungs-MOSFET, n-Kanal, 100 V, 320 mA, 4 ohm, TO-92, Durchsteckmontage tariffCode: 85411000 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 320mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 700mW Bauform - Transistor: TO-92 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 2214 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| ZVN2110ASTZ |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 320MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Description: MOSFET N-CH 100V 320MA E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.58 EUR |
| 4000+ | 0.53 EUR |
| 6000+ | 0.51 EUR |
| 10000+ | 0.49 EUR |
| 14000+ | 0.47 EUR |
| 20000+ | 0.46 EUR |
| ZVN2110ASTZ |
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Hersteller: Diodes Incorporated
MOSFETs N-Chnl 100V
MOSFETs N-Chnl 100V
auf Bestellung 4429 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.69 EUR |
| 10+ | 0.95 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.49 EUR |
| 2000+ | 0.41 EUR |
| ZVN2110ASTZ |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 320MA E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Description: MOSFET N-CH 100V 320MA E-LINE
Packaging: Cut Tape (CT)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
auf Bestellung 25642 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.15 EUR |
| 14+ | 1.35 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.63 EUR |
| ZVN2110ASTZ |
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Hersteller: DIODES INC.
Description: DIODES INC. - ZVN2110ASTZ - Leistungs-MOSFET, n-Kanal, 100 V, 320 mA, 4 ohm, TO-92, Durchsteckmontage
tariffCode: 85411000
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 320mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.4V
euEccn: NLR
Verlustleistung: 700mW
Bauform - Transistor: TO-92
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4ohm
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - ZVN2110ASTZ - Leistungs-MOSFET, n-Kanal, 100 V, 320 mA, 4 ohm, TO-92, Durchsteckmontage
tariffCode: 85411000
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 320mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.4V
euEccn: NLR
Verlustleistung: 700mW
Bauform - Transistor: TO-92
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 2214 Stücke:
Lieferzeit 14-21 Tag (e)