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ZVN4306ASTZ Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 1.1A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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Technische Details ZVN4306ASTZ Diodes Incorporated
Description: MOSFET N-CH 60V 1.1A E-LINE, Packaging: Tape & Box (TB), Package / Case: E-Line-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V, Power Dissipation (Max): 850mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: E-Line (TO-92 compatible), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.