ZVN4306ASTZ Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.1A E-LINE
Packaging: Tape & Box (TB)
Package / Case: E-Line-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: E-Line (TO-92 compatible)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produktrezensionen
Produktbewertung abgeben
Technische Details ZVN4306ASTZ Diodes Incorporated
Description: MOSFET N-CH 60V 1.1A E-LINE, Packaging: Tape & Box (TB), Package / Case: E-Line-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V, Power Dissipation (Max): 850mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: E-Line (TO-92 compatible), Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote ZVN4306ASTZ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
ZVN4306ASTZ | Diodes Incorporated |
MOSFETs N-Chnl 60V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
ZVN4306ASTZ | DIODES INCORPORATED |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.1A Pulsed drain current: 15A Power dissipation: 0.85W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ZVN4306ASTZ |
![]() |
Hersteller: Diodes Incorporated
MOSFETs N-Chnl 60V
MOSFETs N-Chnl 60V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZVN4306ASTZ |
![]() |
Hersteller: DIODES INCORPORATED
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 15A
Power dissipation: 0.85W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.1A; Idm: 15A; 0.85W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.1A
Pulsed drain current: 15A
Power dissipation: 0.85W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



