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ZXM62P02E6TA

ZXM62P02E6TA Diodes Incorporated

ZXM62P02E6.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.4 EUR
6000+0.39 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ZXM62P02E6TA Diodes Incorporated

Description: MOSFET P-CH 20V 2.3A SOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: SOT-23-6, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V.

Weitere Produktangebote ZXM62P02E6TA nach Preis ab 0.43 EUR bis 1.83 EUR

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ZXM62P02E6TA ZXM62P02E6TA Hersteller : Diodes Incorporated ZXM62P02E6.pdf Description: MOSFET P-CH 20V 2.3A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
auf Bestellung 88362 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
18+1 EUR
100+0.7 EUR
500+0.58 EUR
1000+0.49 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
ZXM62P02E6TA ZXM62P02E6TA Hersteller : Diodes Incorporated ZXM62P02E6.pdf MOSFETs 20V P-Chnl HDMOS
auf Bestellung 7260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.83 EUR
10+1.16 EUR
100+0.71 EUR
500+0.58 EUR
1000+0.52 EUR
3000+0.43 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ZXM62P02E6TA ZXM62P02E6TA Hersteller : Diodes Inc 33206241206854392zxm62p02e6.pdf Trans MOSFET P-CH 20V 2.3A 6-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
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ZXM62P02E6TA Hersteller : ZETEX ZXM62P02E6.pdf 03/04+ SOT23-6
auf Bestellung 21100 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH