ZXMC10A816N8TC
Produktcode: 184010
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller:
Verschiedene Bauteile > Verschiedene Bauteile 1
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote ZXMC10A816N8TC nach Preis ab 0.62 EUR bis 2.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
ZXMC10A816N8TC | Diodes Incorporated |
Description: MOSFET N/P-CH 100V 2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V, 717pF @ 50V Rds On (Max) @ Id, Vgs: 230mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
ZXMC10A816N8TC | Diodes Incorporated |
Description: MOSFET N/P-CH 100V 2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V, 717pF @ 50V Rds On (Max) @ Id, Vgs: 230mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 2814 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
ZXMC10A816N8TC | Diodes Incorporated |
MOSFETs 100V COMPLEMENTARY DUAL ENHANCEMNT MODE |
auf Bestellung 310 Stücke: Lieferzeit 10-14 Tag (e) |
|
| ZXMC10A816N8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 100V 2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V, 717pF @ 50V
Rds On (Max) @ Id, Vgs: 230mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 100V 2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V, 717pF @ 50V
Rds On (Max) @ Id, Vgs: 230mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.62 EUR |
| ZXMC10A816N8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 100V 2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V, 717pF @ 50V
Rds On (Max) @ Id, Vgs: 230mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 100V 2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V, 717pF @ 50V
Rds On (Max) @ Id, Vgs: 230mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 2814 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.36 EUR |
| 12+ | 1.49 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.71 EUR |
| ZXMC10A816N8TC |
|
Hersteller: Diodes Incorporated
MOSFETs 100V COMPLEMENTARY DUAL ENHANCEMNT MODE
MOSFETs 100V COMPLEMENTARY DUAL ENHANCEMNT MODE
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.5 EUR |
| 10+ | 1.59 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.76 EUR |
| 2500+ | 0.68 EUR |