Produkte > DIODES INCORPORATED > ZXMC3A16DN8TA

ZXMC3A16DN8TA Diodes Incorporated


ZXMC3A16DN8.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 44075 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+1.33 EUR
1000+1.23 EUR
1500+1.17 EUR
2500+1.11 EUR
3500+1.06 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit: 10-14 Tag (e)
Mindestmenge: 500 Stücke
Produktrezensionen
Produktbewertung abgeben

Technische Details ZXMC3A16DN8TA Diodes Incorporated

Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A, Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO.

Weitere Produktangebote ZXMC3A16DN8TA nach Preis ab 0.99 EUR bis 3.89 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
ZXMC3A16DN8TA ZXMC3A16DN8TA Diodes Incorporated ZXMC3A16DN8.pdf MOSFETs N and P Channel
auf Bestellung 1354 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.61 EUR
10+2.31 EUR
100+1.55 EUR
500+1.05 EUR
1000+0.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ZXMC3A16DN8TA ZXMC3A16DN8TA Diodes Incorporated ZXMC3A16DN8.pdf Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 44290 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.89 EUR
10+2.49 EUR
100+1.68 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ZXMC3A16DN8TA ZXMC3A16DN8.pdf
Hersteller: Diodes Incorporated
MOSFETs N and P Channel
auf Bestellung 1354 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3.61 EUR
10+2.31 EUR
100+1.55 EUR
500+1.05 EUR
1000+0.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ZXMC3A16DN8TA ZXMC3A16DN8.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 44290 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.89 EUR
10+2.49 EUR
100+1.68 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH