ZXMC3A16DN8TA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
| Anzahl | Privatkunde |
|---|---|
| 500+ | 1.33 EUR |
| 1000+ | 1.23 EUR |
| 1500+ | 1.17 EUR |
| 2500+ | 1.11 EUR |
| 3500+ | 1.06 EUR |
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Technische Details ZXMC3A16DN8TA Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO, Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.25W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V.
Weitere Produktangebote ZXMC3A16DN8TA nach Preis ab 0.99 EUR bis 3.89 EUR
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ZXMC3A16DN8TA | Diodes Incorporated |
MOSFETs N and P Channel |
auf Bestellung 1354 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMC3A16DN8TA | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A Drain to Source Voltage (Vdss): 30V Power - Max: 1.25W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 44290 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMC3A16DN8TA |
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Hersteller: Diodes Incorporated
MOSFETs N and P Channel
MOSFETs N and P Channel
auf Bestellung 1354 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.61 EUR |
| 10+ | 2.31 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.99 EUR |
| ZXMC3A16DN8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 44290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.89 EUR |
| 10+ | 2.49 EUR |
| 100+ | 1.68 EUR |