ZXMC3A16DN8TA Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 44075 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 1.12 EUR |
| 1000+ | 1.03 EUR |
| 1500+ | 0.98 EUR |
| 2500+ | 0.93 EUR |
| 3500+ | 0.89 EUR |
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Technische Details ZXMC3A16DN8TA Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A, Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO.
Weitere Produktangebote ZXMC3A16DN8TA nach Preis ab 1 EUR bis 3.27 EUR
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ZXMC3A16DN8TA | Hersteller : Diodes Incorporated |
MOSFETs N and P Channel |
auf Bestellung 1395 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMC3A16DN8TA | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO |
auf Bestellung 44290 Stücke: Lieferzeit 10-14 Tag (e) |
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