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ZXMC3A16DN8TA

ZXMC3A16DN8TA Diodes Incorporated


ZXMC3A16DN8.pdf Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 44075 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+1.12 EUR
1000+1.03 EUR
1500+0.98 EUR
2500+0.93 EUR
3500+0.89 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ZXMC3A16DN8TA Diodes Incorporated

Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A, Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO.

Weitere Produktangebote ZXMC3A16DN8TA nach Preis ab 1.00 EUR bis 3.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ZXMC3A16DN8TA ZXMC3A16DN8TA Hersteller : Diodes Incorporated ZXMC3A16DN8.pdf MOSFETs N and P Channel
auf Bestellung 1395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.12 EUR
10+2.02 EUR
100+1.37 EUR
500+1.05 EUR
1000+1.00 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ZXMC3A16DN8TA ZXMC3A16DN8TA Hersteller : Diodes Incorporated ZXMC3A16DN8.pdf Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 44290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
10+2.09 EUR
100+1.41 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH