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ZXMC3A16DN8TC

ZXMC3A16DN8TC Diodes Incorporated


ZXMC3A16DN8.pdf Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.93 EUR
5000+0.89 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ZXMC3A16DN8TC Diodes Incorporated

Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A, Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Active.

Weitere Produktangebote ZXMC3A16DN8TC nach Preis ab 0.91 EUR bis 3.27 EUR

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ZXMC3A16DN8TC ZXMC3A16DN8TC Hersteller : Diodes Incorporated ZXMC3A16DN8.pdf MOSFETs Cmp 30V NP Ch UMOS
auf Bestellung 3277 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.89 EUR
10+1.9 EUR
100+1.31 EUR
500+1.06 EUR
1000+1 EUR
2500+0.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ZXMC3A16DN8TC ZXMC3A16DN8TC Hersteller : Diodes Incorporated ZXMC3A16DN8.pdf Description: MOSFET N/P-CH 30V 4.9A/4.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 22877 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
10+2.09 EUR
100+1.41 EUR
500+1.12 EUR
1000+1.03 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH