ZXMC3AMCTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN3020B-8
Part Status: Active
Description: MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN3020B-8
Part Status: Active
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.68 EUR |
6000+ | 0.65 EUR |
9000+ | 0.62 EUR |
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Produktbewertung abgeben
Technische Details ZXMC3AMCTA Diodes Incorporated
Description: DIODES INC. - ZXMC3AMCTA - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 2.9 A, 2.9 A, 0.1 ohm, tariffCode: 85411000, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 2.9A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 2.9A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.1ohm, Verlustleistung, p-Kanal: 2.45W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: DFN3020B, Anzahl der Pins: 8Pins, Produktpalette: PW Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.1ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 2.45W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (14-Jun-2023).
Weitere Produktangebote ZXMC3AMCTA nach Preis ab 0.51 EUR bis 1.65 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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ZXMC3AMCTA | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 3/-2.2A Power dissipation: 1.5W Case: DFN3020B-8 Gate-source voltage: ±20V On-state resistance: 0.18/0.33Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2950 Stücke: Lieferzeit 7-14 Tag (e) |
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ZXMC3AMCTA | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 3/-2.2A Power dissipation: 1.5W Case: DFN3020B-8 Gate-source voltage: ±20V On-state resistance: 0.18/0.33Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMC3AMCTA | Hersteller : Diodes Incorporated | MOSFET 30V COMP ENH MODE 20V VGS 3.7 IDS |
auf Bestellung 16377 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMC3AMCTA | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 2.9A/2.1A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DFN3020B-8 Part Status: Active |
auf Bestellung 42860 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMC3AMCTA | Hersteller : DIODES INC. |
Description: DIODES INC. - ZXMC3AMCTA - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 2.9 A, 2.9 A, 0.1 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 2.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 2.9A Drain-Source-Durchgangswiderstand, p-Kanal: 0.1ohm Verlustleistung, p-Kanal: 2.45W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: DFN3020B Anzahl der Pins: 8Pins Produktpalette: PW Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.1ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 2.45W Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMC3AMCTA | Hersteller : DIODES INC. |
Description: DIODES INC. - ZXMC3AMCTA - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 2.9 A, 2.9 A, 0.1 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 2.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 2.9A Drain-Source-Durchgangswiderstand, p-Kanal: 0.1ohm Verlustleistung, p-Kanal: 2.45W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: DFN3020B Anzahl der Pins: 8Pins Produktpalette: PW Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.1ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 2.45W Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMC3AMCTA | Hersteller : Diodes Inc | Trans MOSFET N/P-CH 30V 2.9A/2.1A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |