ZXMC3AMCTA Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 2+ | 1.95 EUR |
| 10+ | 1.37 EUR |
| 100+ | 0.87 EUR |
| 250+ | 0.73 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.65 EUR |
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Technische Details ZXMC3AMCTA Diodes Incorporated
Description: MOSFET N/P-CH 30V 2.9A/2.1A 8DFN, Mounting Type: Surface Mount, Package / Case: 8-WDFN Exposed Pad, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: DFN3020B-8, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V, Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.7W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel.
Weitere Produktangebote ZXMC3AMCTA nach Preis ab 0.77 EUR bis 2.53 EUR
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ZXMC3AMCTA | Diodes Incorporated |
 Description: MOSFET N/P-CH 30V 2.9A/2.1A 8DFNPart Status: Active Supplier Device Package: DFN3020B-8 Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 30V Power - Max: 1.7W |
auf Bestellung 3983 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMC3AMCTA |
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Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
Part Status: Active
Supplier Device Package: DFN3020B-8
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.7W
Description: MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
Part Status: Active
Supplier Device Package: DFN3020B-8
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.7W
auf Bestellung 3983 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.53 EUR |
| 11+ | 1.6 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.77 EUR |