ZXMC3F31DN8TA Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N/P-CH 30V 6.8A/4.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 0.59 EUR |
| 1000+ | 0.53 EUR |
| 1500+ | 0.5 EUR |
| 2500+ | 0.47 EUR |
| 3500+ | 0.45 EUR |
| 5000+ | 0.43 EUR |
| 12500+ | 0.4 EUR |
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Technische Details ZXMC3F31DN8TA Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.8A/4.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A, Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V, FET Feature: Logic Level Gate, 4.5V Drive, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote ZXMC3F31DN8TA nach Preis ab 0.41 EUR bis 1.85 EUR
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ZXMC3F31DN8TA | Hersteller : Diodes Incorporated |
MOSFETs 30V S08 Dual MOSFET 20V VBR 4.5V Gate |
auf Bestellung 3722 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMC3F31DN8TA | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6.8A/4.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 23500 Stücke: Lieferzeit 10-14 Tag (e) |
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