ZXMC4559DN8TC Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 1+ | 3.85 EUR |
| 10+ | 2.48 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.27 EUR |
| 2500+ | 1.15 EUR |
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Technische Details ZXMC4559DN8TC Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V, Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A, Drain to Source Voltage (Vdss): 60V, Power - Max: 2.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote ZXMC4559DN8TC
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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ZXMC4559DN8TC | Diodes Incorporated |
 Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SOSupplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A Drain to Source Voltage (Vdss): 60V Power - Max: 2.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ZXMC4559DN8TC | Diodes Incorporated |
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ZXMC4559DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ZXMC4559DN8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH