ZXMC6A09DN8TA Diodes Incorporated

Description: MOSFET N/P-CH 60V 3.9A/3.7A 8SO, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V, Rds On (Max) @ Id, Vgs: 45mOhm @ 8.2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V, 1580pF @ 40V, Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.7A, Drain to Source Voltage (Vdss): 60V, Power - Max: 1.8W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).