ZXMHC10A07N8TC Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 0.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 870mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 800mA, 680mA
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V, 141pF @ 50V
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
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Technische Details ZXMHC10A07N8TC Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 0.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 870mW, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 800mA, 680mA, Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V, 141pF @ 50V, Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote ZXMHC10A07N8TC nach Preis ab 0.76 EUR bis 2.94 EUR
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ZXMHC10A07N8TC | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 0.9/-0.7A Power dissipation: 0.87W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.9/1.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: MOSFET H-Bridge |
auf Bestellung 2047 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMHC10A07N8TC | Diodes Incorporated |
Description: MOSFET 2N/2P-CH 100V 0.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 870mW Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 800mA, 680mA Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V, 141pF @ 50V Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 59286 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMHC10A07N8TC | Diodes Incorporated |
MOSFETs Mosfet H-Bridge 100/-100 1.1/-0.9 |
auf Bestellung 22896 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMHC10A07N8TC | Diodes INC. |
Транзистор польовий 2N+2P, Udss, В = 100, Id = 800 мА, Ciss, пФ @ Uds, В = 138 @ 60, Qg, нКл = 2,9 @ 10 В, Rds = 700 мОм @ 1,5 A, 10 В, Ugs(th) = 4 В @ 250 мкА, Р, Вт = 0,87, Тексп, °C = -55...+150, Тип монт. = smd, Id2 = 680 мА,... Транзистори Корпус: S Anzahl je Verpackung: 2500 Stücke |
verfügbar 15 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| ZXMHC10A07N8TC |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; 100/-100V; 0.9/-0.7A; 0.87W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 0.9/-0.7A
Power dissipation: 0.87W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.9/1.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: MOSFET H-Bridge
auf Bestellung 2047 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 70+ | 1.03 EUR |
| 83+ | 0.87 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.76 EUR |
| ZXMHC10A07N8TC |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 0.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 870mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 800mA, 680mA
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V, 141pF @ 50V
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N/2P-CH 100V 0.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 870mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 800mA, 680mA
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V, 141pF @ 50V
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 59286 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.82 EUR |
| 10+ | 1.77 EUR |
| 100+ | 1.16 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.87 EUR |
| ZXMHC10A07N8TC |
|
Hersteller: Diodes Incorporated
MOSFETs Mosfet H-Bridge 100/-100 1.1/-0.9
MOSFETs Mosfet H-Bridge 100/-100 1.1/-0.9
auf Bestellung 22896 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.94 EUR |
| 10+ | 1.85 EUR |
| 100+ | 1.26 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.91 EUR |
| 2500+ | 0.81 EUR |
| ZXMHC10A07N8TC |
|
Hersteller: Diodes INC.
Транзистор польовий 2N+2P, Udss, В = 100, Id = 800 мА, Ciss, пФ @ Uds, В = 138 @ 60, Qg, нКл = 2,9 @ 10 В, Rds = 700 мОм @ 1,5 A, 10 В, Ugs(th) = 4 В @ 250 мкА, Р, Вт = 0,87, Тексп, °C = -55...+150, Тип монт. = smd, Id2 = 680 мА,... Транзистори Корпус: S
Anzahl je Verpackung: 2500 Stücke
Транзистор польовий 2N+2P, Udss, В = 100, Id = 800 мА, Ciss, пФ @ Uds, В = 138 @ 60, Qg, нКл = 2,9 @ 10 В, Rds = 700 мОм @ 1,5 A, 10 В, Ugs(th) = 4 В @ 250 мкА, Р, Вт = 0,87, Тексп, °C = -55...+150, Тип монт. = smd, Id2 = 680 мА,... Транзистори Корпус: S
Anzahl je Verpackung: 2500 Stücke
verfügbar 15 Stücke: