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ZXMHC10A07T8TA

ZXMHC10A07T8TA Diodes Incorporated


ZXMHC10A07T8.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 1A/0.8A SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A, 800mA
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V, 141pF @ 50V
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SM8
auf Bestellung 8000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.44 EUR
2000+ 1.37 EUR
5000+ 1.32 EUR
Mindestbestellmenge: 1000
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Technische Details ZXMHC10A07T8TA Diodes Incorporated

Description: MOSFET 2N/2P-CH 100V 1A/0.8A SM8, Packaging: Tape & Reel (TR), Package / Case: SOT-223-8, Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1A, 800mA, Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V, 141pF @ 50V, Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SM8.

Weitere Produktangebote ZXMHC10A07T8TA nach Preis ab 1.7 EUR bis 4.55 EUR

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ZXMHC10A07T8TA ZXMHC10A07T8TA Hersteller : Diodes Incorporated ZXMHC10A07T8.pdf Description: MOSFET 2N/2P-CH 100V 1A/0.8A SM8
Packaging: Cut Tape (CT)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A, 800mA
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V, 141pF @ 50V
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SM8
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.03 EUR
10+ 2.52 EUR
100+ 2.01 EUR
500+ 1.7 EUR
Mindestbestellmenge: 6
ZXMHC10A07T8TA ZXMHC10A07T8TA Hersteller : Diodes Incorporated ZXMHC10A07T8.pdf MOSFET 100V 1.4A N-Channel MOSFET H-Bridge
auf Bestellung 1967 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
12+4.55 EUR
14+ 3.8 EUR
100+ 3.02 EUR
250+ 2.89 EUR
500+ 2.54 EUR
1000+ 2.11 EUR
2000+ 2.05 EUR
Mindestbestellmenge: 12
ZXMHC10A07T8TA ZXMHC10A07T8TA Hersteller : Diodes Inc 35629563080399232zxmhc10a07t8.pdf Trans MOSFET N/P-CH 100V 1A/0.8A 8-Pin SM8 T/R
Produkt ist nicht verfügbar
ZXMHC10A07T8TA Hersteller : DIODES INCORPORATED ZXMHC10A07T8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
ZXMHC10A07T8TA ZXMHC10A07T8TA Hersteller : Diodes Zetex 35629563080399232zxmhc10a07t8.pdf Trans MOSFET N/P-CH 100V 1A/0.8A 8-Pin SM8 T/R
Produkt ist nicht verfügbar
ZXMHC10A07T8TA Hersteller : DIODES INCORPORATED ZXMHC10A07T8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar