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ZXMHC10A07T8TA

ZXMHC10A07T8TA Diodes Incorporated

ZXMHC10A07T8.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A, 800mA
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V, 141pF @ 50V
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SM8
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.33 EUR
2000+1.24 EUR
3000+1.22 EUR
Mindestbestellmenge: 1000
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Technische Details ZXMHC10A07T8TA Diodes Incorporated

Description: MOSFET 2N/2P-CH 100V SM8, Packaging: Tape & Reel (TR), Package / Case: SOT-223-8, Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1A, 800mA, Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V, 141pF @ 50V, Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SM8.

Weitere Produktangebote ZXMHC10A07T8TA nach Preis ab 1.37 EUR bis 4.17 EUR

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ZXMHC10A07T8TA ZXMHC10A07T8TA Hersteller : Diodes Incorporated ZXMHC10A07T8.pdf MOSFETs 100V 1.4A N-Channel MOSFET H-Bridge
auf Bestellung 1085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.75 EUR
10+2.71 EUR
100+2.01 EUR
500+1.62 EUR
1000+1.49 EUR
2000+1.37 EUR
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ZXMHC10A07T8TA ZXMHC10A07T8TA Hersteller : Diodes Incorporated ZXMHC10A07T8.pdf Description: MOSFET 2N/2P-CH 100V SM8
Packaging: Cut Tape (CT)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A, 800mA
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V, 141pF @ 50V
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SM8
auf Bestellung 14602 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+2.69 EUR
100+1.85 EUR
500+1.5 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
ZXMHC10A07T8TA ZXMHC10A07T8TA Hersteller : Diodes Inc 35629563080399232zxmhc10a07t8.pdf Trans MOSFET N/P-CH 100V 1A/0.8A 8-Pin SM8 T/R
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ZXMHC10A07T8TA ZXMHC10A07T8TA Hersteller : Diodes Zetex 35629563080399232zxmhc10a07t8.pdf Trans MOSFET N/P-CH 100V 1A/0.8A 8-Pin SM8 T/R
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ZXMHC10A07T8TA Hersteller : DIODES INCORPORATED ZXMHC10A07T8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 1.3W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 1.4/-1.3A
Power dissipation: 1.3W
Case: SM8
Gate-source voltage: ±20V
On-state resistance: 700mΩ/1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Gate charge: 2.9/3.5nC
Produkt ist nicht verfügbar
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