ZXMHC10A07T8TA Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N/2P-CH 100V SM8
Packaging: Tape & Reel (TR)
Package / Case: SOT-223-8
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A, 800mA
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V, 141pF @ 50V
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SM8
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.33 EUR |
| 2000+ | 1.24 EUR |
| 3000+ | 1.22 EUR |
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Technische Details ZXMHC10A07T8TA Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V SM8, Packaging: Tape & Reel (TR), Package / Case: SOT-223-8, Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1A, 800mA, Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V, 141pF @ 50V, Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SM8.
Weitere Produktangebote ZXMHC10A07T8TA nach Preis ab 1.37 EUR bis 4.17 EUR
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ZXMHC10A07T8TA | Hersteller : Diodes Incorporated |
MOSFETs 100V 1.4A N-Channel MOSFET H-Bridge |
auf Bestellung 1085 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMHC10A07T8TA | Hersteller : Diodes Incorporated |
Description: MOSFET 2N/2P-CH 100V SM8 Packaging: Cut Tape (CT) Package / Case: SOT-223-8 Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A, 800mA Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V, 141pF @ 50V Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SM8 |
auf Bestellung 14602 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMHC10A07T8TA | Hersteller : Diodes Inc |
Trans MOSFET N/P-CH 100V 1A/0.8A 8-Pin SM8 T/R |
Produkt ist nicht verfügbar |
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ZXMHC10A07T8TA | Hersteller : Diodes Zetex |
Trans MOSFET N/P-CH 100V 1A/0.8A 8-Pin SM8 T/R |
Produkt ist nicht verfügbar |
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| ZXMHC10A07T8TA | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 1.3W Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 1.4/-1.3A Power dissipation: 1.3W Case: SM8 Gate-source voltage: ±20V On-state resistance: 700mΩ/1Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Kind of transistor: complementary pair Gate charge: 2.9/3.5nC |
Produkt ist nicht verfügbar |