ZXMHC3A01N8TC Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N/2P-CH 30V 2.17A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 870mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.17A, 1.64A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V, 204pF @ 15V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 97500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.66 EUR |
| 5000+ | 0.62 EUR |
| 7500+ | 0.61 EUR |
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Technische Details ZXMHC3A01N8TC Diodes Incorporated
Description: MOSFET 2N/2P-CH 30V 2.17A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 870mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.17A, 1.64A, Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V, 204pF @ 15V, Rds On (Max) @ Id, Vgs: 125mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote ZXMHC3A01N8TC nach Preis ab 0.68 EUR bis 2.5 EUR
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ZXMHC3A01N8TC | Hersteller : Diodes Incorporated |
MOSFETs Mosfet H-Bridge 30/-30V 2.7/-2.1A |
auf Bestellung 33916 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMHC3A01N8TC | Hersteller : Diodes Incorporated |
Description: MOSFET 2N/2P-CH 30V 2.17A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 870mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.17A, 1.64A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V, 204pF @ 15V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 100035 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |