ZXMHC6A07N8TC Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N/2P-CH 60V 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 870mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.39A, 1.28A
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V, 141pF @ 50V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 215000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.04 EUR |
| 5000+ | 0.99 EUR |
| 12500+ | 0.95 EUR |
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Technische Details ZXMHC6A07N8TC Diodes Incorporated
Description: MOSFET 2N/2P-CH 60V 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 870mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 1.39A, 1.28A, Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V, 141pF @ 50V, Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote ZXMHC6A07N8TC nach Preis ab 0.99 EUR bis 2.52 EUR
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ZXMHC6A07N8TC | Hersteller : Diodes Incorporated |
MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A |
auf Bestellung 85460 Stücke: Lieferzeit 14-28 Tag (e) |
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ZXMHC6A07N8TC | Hersteller : Diodes Incorporated |
Description: MOSFET 2N/2P-CH 60V 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 870mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.39A, 1.28A Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V, 141pF @ 50V Rds On (Max) @ Id, Vgs: 250mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 217628 Stücke: Lieferzeit 21-28 Tag (e) |
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auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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ZXMHC6A07N8TC | Hersteller : Diodes Inc |
Trans MOSFET N/P-CH 60V 1.39A/1.28A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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| ZXMHC6A07N8TC | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| ZXMHC6A07N8TC | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |