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ZXMN10A08DN8TA

ZXMN10A08DN8TA Diodes Incorporated

ZXMN10A08DN8.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 100V 1.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 81500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+0.74 EUR
1000+0.67 EUR
1500+0.64 EUR
2500+0.60 EUR
3500+0.57 EUR
5000+0.55 EUR
12500+0.53 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ZXMN10A08DN8TA Diodes Incorporated

Description: MOSFET 2N-CH 100V 1.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1.6A, Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V, Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Supplier Device Package: 8-SO.

Weitere Produktangebote ZXMN10A08DN8TA nach Preis ab 0.60 EUR bis 2.27 EUR

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ZXMN10A08DN8TA ZXMN10A08DN8TA Hersteller : Diodes Incorporated ZXMN10A08DN8-3195056.pdf MOSFETs 100V 2.1A N-Channel Enhancement MOSFET
auf Bestellung 688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.95 EUR
10+1.31 EUR
100+0.90 EUR
500+0.66 EUR
1000+0.60 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN10A08DN8TA ZXMN10A08DN8TA Hersteller : Diodes Incorporated ZXMN10A08DN8.pdf Description: MOSFET 2N-CH 100V 1.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 82006 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
13+1.42 EUR
100+0.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN10A08DN8TA Hersteller : DIODES/ZETEX ZXMN10A08DN8.pdf Transistor 2xN-Channel MOSFET; 100V; 20V; 300mOhm; 2,1A; 1,8W; -55°C ~ 150°C; ZXMN10A08DN8TA TZXMN10a08dn8
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+1.51 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH