ZXMN10A08DN8TA Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 100V 1.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SO
auf Bestellung 81500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 0.74 EUR |
| 1000+ | 0.67 EUR |
| 1500+ | 0.64 EUR |
| 2500+ | 0.6 EUR |
| 3500+ | 0.57 EUR |
| 5000+ | 0.55 EUR |
| 12500+ | 0.53 EUR |
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Technische Details ZXMN10A08DN8TA Diodes Incorporated
Description: MOSFET 2N-CH 100V 1.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1.6A, Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V, Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Supplier Device Package: 8-SO.
Weitere Produktangebote ZXMN10A08DN8TA nach Preis ab 0.94 EUR bis 2.27 EUR
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ZXMN10A08DN8TA | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 100V 1.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.6A Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: 8-SO |
auf Bestellung 82006 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMN10A08DN8TA | Hersteller : DIODES/ZETEX |
Transistor 2xN-Channel MOSFET; 100V; 20V; 300mOhm; 2,1A; 1,8W; -55°C ~ 150°C; ZXMN10A08DN8TA TZXMN10a08dn8 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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ZXMN10A08DN8TA | Hersteller : Diodes Incorporated |
MOSFETs 100V 2.1A N-Channel Enhancement MOSFET |
Produkt ist nicht verfügbar |