ZXMN10A08E6QTA Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V SOT26 T&R, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: SOT-26, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V.