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ZXMN10A08E6QTA

ZXMN10A08E6QTA Diodes Zetex


zxmn10a08e6q.pdf Hersteller: Diodes Zetex
Trans MOSFET N-CH 100V 3.5A Automotive AEC-Q101 6-Pin SOT-26 T/R
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Technische Details ZXMN10A08E6QTA Diodes Zetex

Description: MOSFET BVDSS: 61V~100V SOT26 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V.

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ZXMN10A08E6QTA ZXMN10A08E6QTA Hersteller : Diodes Incorporated Description: MOSFET BVDSS: 61V~100V SOT26 T&R
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
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ZXMN10A08E6QTA Hersteller : Diodes Incorporated DIOD_S_A0005608055_1-2542738.pdf MOSFET MOSFET BVDSS: 61V-100V SOT26 T&R 3K
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