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ZXMN10A08GTA

ZXMN10A08GTA Diodes Incorporated

ZXMN10A08G.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.51 EUR
2000+ 0.45 EUR
5000+ 0.43 EUR
10000+ 0.4 EUR
25000+ 0.39 EUR
Mindestbestellmenge: 1000
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Technische Details ZXMN10A08GTA Diodes Incorporated

Description: MOSFET N-CH 100V 2A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V.

Weitere Produktangebote ZXMN10A08GTA nach Preis ab 0.43 EUR bis 1.2 EUR

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Preis ohne MwSt
ZXMN10A08GTA ZXMN10A08GTA Hersteller : Diodes Incorporated ZXMN10A08G.pdf MOSFET 100V N-Channel 2A MOSFET
auf Bestellung 17038 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.13 EUR
10+ 0.98 EUR
100+ 0.69 EUR
500+ 0.53 EUR
1000+ 0.47 EUR
2000+ 0.44 EUR
5000+ 0.43 EUR
Mindestbestellmenge: 3
ZXMN10A08GTA ZXMN10A08GTA Hersteller : Diodes Incorporated ZXMN10A08G.pdf Description: MOSFET N-CH 100V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
auf Bestellung 147364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.2 EUR
18+ 1.03 EUR
100+ 0.72 EUR
500+ 0.6 EUR
Mindestbestellmenge: 15
ZXMN10A08GTA ZXMN10A08G.pdf
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
ZXMN10A08GTA ZXMN10A08GTA Hersteller : Diodes Inc 34084255365546936zxmn10a08g.pdf Trans MOSFET N-CH 100V 2A 4-Pin(3+Tab) SOT-223 T/R
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