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ZXMN10A08GTA

ZXMN10A08GTA Diodes Incorporated

ZXMN10A08G.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
auf Bestellung 56000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.48 EUR
2000+0.44 EUR
3000+0.42 EUR
5000+0.39 EUR
7000+0.38 EUR
10000+0.37 EUR
25000+0.36 EUR
Mindestbestellmenge: 1000
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Technische Details ZXMN10A08GTA Diodes Incorporated

Description: MOSFET N-CH 100V 2A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V.

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ZXMN10A08GTA ZXMN10A08GTA Hersteller : Diodes Incorporated ZXMN10A08G.pdf Description: MOSFET N-CH 100V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
auf Bestellung 56638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
17+1.07 EUR
100+0.71 EUR
500+0.55 EUR
Mindestbestellmenge: 11
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ZXMN10A08GTA ZXMN10A08GTA Hersteller : Diodes Incorporated ZXMN10A08G.pdf MOSFETs 100V N-Channel 2A MOSFET
auf Bestellung 7051 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.74 EUR
10+1.09 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 2
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ZXMN10A08GTA ZXMN10A08G.pdf
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
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ZXMN10A08GTA ZXMN10A08GTA Hersteller : Diodes Inc 34084255365546936zxmn10a08g.pdf Trans MOSFET N-CH 100V 2A 4-Pin(3+Tab) SOT-223 T/R
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ZXMN10A08GTA Hersteller : DIODES INCORPORATED ZXMN10A08G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Power dissipation: 2W
Case: SOT223
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 4.2nC
Produkt ist nicht verfügbar
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