ZXMN10A11GTA Diodes Zetex
auf Bestellung 43000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.36 EUR |
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Technische Details ZXMN10A11GTA Diodes Zetex
Description: MOSFET N-CH 100V 1.7A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V.
Weitere Produktangebote ZXMN10A11GTA nach Preis ab 0.41 EUR bis 1.87 EUR
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ZXMN10A11GTA | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 100V 1.7A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V |
auf Bestellung 111000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A11GTA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN10A11GTA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN10A11GTA | Hersteller : Diodes Incorporated |
MOSFETs 100V N-Chnl UMOS |
auf Bestellung 1171 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN10A11GTA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 100V 1.7A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 2.6A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 50 V |
auf Bestellung 111874 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMN10A11GTA | Hersteller : DIODES INCORPORATED |
ZXMN10A11GTA SMD N channel transistors |
auf Bestellung 303 Stücke: Lieferzeit 7-14 Tag (e) |
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ZXMN10A11GTA Produktcode: 131543
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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ZXMN10A11GTA | Hersteller : Diodes Inc |
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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ZXMN10A11GTA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |