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ZXMN15A27KTC

ZXMN15A27KTC Diodes Incorporated

ZXMN15A27K.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 150V 1.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.15A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 25 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.16 EUR
Mindestbestellmenge: 16
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Technische Details ZXMN15A27KTC Diodes Incorporated

Description: MOSFET N-CH 150V 1.7A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 650mOhm @ 2.15A, 10V, Power Dissipation (Max): 2.2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 25 V.

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ZXMN15A27KTC ZXMN15A27KTC Hersteller : Diodes Incorporated ZXMN15A27K-78581.pdf MOSFET ENHANCE MODE MOSFET 150V N-CHANNEL
auf Bestellung 136 Stücke:
Lieferzeit 14-28 Tag (e)
ZXMN15A27KTC ZXMN15A27K.pdf
auf Bestellung 6070 Stücke:
Lieferzeit 21-28 Tag (e)
ZXMN15A27KTC ZXMN15A27KTC Hersteller : Diodes Incorporated ZXMN15A27K.pdf Description: MOSFET N-CH 150V 1.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.15A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 25 V
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