ZXMN2A04DN8TA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 500+ | 2.13 EUR |
| 1000+ | 1.81 EUR |
| 2500+ | 1.71 EUR |
| 5000+ | 1.65 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details ZXMN2A04DN8TA Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.9A, Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote ZXMN2A04DN8TA nach Preis ab 1.23 EUR bis 3.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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ZXMN2A04DN8TA | Diodes Incorporated |
MOSFETs Dl 20V N-Chnl UMOS |
auf Bestellung 494 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN2A04DN8TA | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 5.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.9A Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 12579 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMN2A04DN8TA | Diodes Zetex |
Trans MOSFET N-CH 20V 7.7A 8-Pin SOIC T/R |
auf Bestellung 320 Stücke: Lieferzeit 14-21 Tag (e) |
|
| ZXMN2A04DN8TA |
|
Hersteller: Diodes Incorporated
MOSFETs Dl 20V N-Chnl UMOS
MOSFETs Dl 20V N-Chnl UMOS
auf Bestellung 494 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.67 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.43 EUR |
| 500+ | 1.81 EUR |
| ZXMN2A04DN8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 20V 5.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 12579 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.81 EUR |
| 10+ | 3.15 EUR |
| 100+ | 2.51 EUR |
| ZXMN2A04DN8TA |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 20V 7.7A 8-Pin SOIC T/R
Trans MOSFET N-CH 20V 7.7A 8-Pin SOIC T/R
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 111+ | 1.61 EUR |
| 131+ | 1.32 EUR |
| 136+ | 1.23 EUR |