ZXMN2B03E6TA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.3A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
Description: MOSFET N-CH 20V 4.3A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.3A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
auf Bestellung 2994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.36 EUR |
15+ | 1.19 EUR |
100+ | 0.91 EUR |
500+ | 0.72 EUR |
1000+ | 0.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ZXMN2B03E6TA Diodes Incorporated
Description: MOSFET N-CH 20V 4.3A SOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 4.3A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V.
Weitere Produktangebote ZXMN2B03E6TA
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
ZXMN2B03E6TA | Hersteller : Diodes Incorporated | MOSFET 20V N-Ch 4.6 MOSFET w/low gate drive cap |
auf Bestellung 8780 Stücke: Lieferzeit 14-28 Tag (e) |
||
ZXMN2B03E6TA |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
||||
ZXMN2B03E6TA | Hersteller : Diodes Inc | Trans MOSFET N-CH 20V 5.4A 6-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
||
ZXMN2B03E6TA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 4.3A SOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.3A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V |
Produkt ist nicht verfügbar |