ZXMN2F30FHTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 960mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.21 EUR |
| 9000+ | 0.2 EUR |
| 30000+ | 0.19 EUR |
| 75000+ | 0.18 EUR |
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Technische Details ZXMN2F30FHTA Diodes Incorporated
Description: MOSFET N-CH 20V 4.1A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 960mW (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote ZXMN2F30FHTA nach Preis ab 0.19 EUR bis 1.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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ZXMN2F30FHTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 0.96W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Power dissipation: 0.96W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 65mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2869 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN2F30FHTA | Diodes Incorporated |
Description: MOSFET N-CH 20V 4.1A SOT23-3 Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 184462 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN2F30FHTA | Diodes Incorporated |
MOSFETs 20V N-Channel Enhance. Mode MOSFET |
auf Bestellung 1047 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMN2F30FHTA | DIODES/ZETEX |
Transistor N-Channel MOSFET; 20V; 12V; 65mOhm; 4,9A; 1,4W; -55°C ~ 150°C; ZXMN2F30FHTA TZXMN2f30fh Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 0.96W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 0.96W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2869 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 152+ | 0.56 EUR |
| 227+ | 0.38 EUR |
| 350+ | 0.24 EUR |
| 500+ | 0.19 EUR |
| ZXMN2F30FHTA |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.1A SOT23-3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 960mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 20V 4.1A SOT23-3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 960mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 184462 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 32+ | 0.65 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.25 EUR |
| ZXMN2F30FHTA |
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Hersteller: Diodes Incorporated
MOSFETs 20V N-Channel Enhance. Mode MOSFET
MOSFETs 20V N-Channel Enhance. Mode MOSFET
auf Bestellung 1047 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.61 EUR |
| 10+ | 0.99 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| 3000+ | 0.25 EUR |
| ZXMN2F30FHTA |
|
Hersteller: DIODES/ZETEX
Transistor N-Channel MOSFET; 20V; 12V; 65mOhm; 4,9A; 1,4W; -55°C ~ 150°C; ZXMN2F30FHTA TZXMN2f30fh
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 20V; 12V; 65mOhm; 4,9A; 1,4W; -55°C ~ 150°C; ZXMN2F30FHTA TZXMN2f30fh
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.52 EUR |