ZXMN2F30FHTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 4.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.17 EUR |
| 30000+ | 0.16 EUR |
| 75000+ | 0.15 EUR |
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Technische Details ZXMN2F30FHTA Diodes Incorporated
Description: MOSFET N-CH 20V 4.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 960mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V.
Weitere Produktangebote ZXMN2F30FHTA nach Preis ab 0.16 EUR bis 0.86 EUR
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ZXMN2F30FHTA | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 0.96W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Power dissipation: 0.96W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 65mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2869 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN2F30FHTA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 4.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.5A, 4.5V Power Dissipation (Max): 960mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 10 V |
auf Bestellung 184462 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN2F30FHTA | Hersteller : Diodes Incorporated |
MOSFETs 20V N-Channel Enhance. Mode MOSFET |
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| ZXMN2F30FHTA | Hersteller : DIODES/ZETEX |
Transistor N-Channel MOSFET; 20V; 12V; 65mOhm; 4,9A; 1,4W; -55°C ~ 150°C; ZXMN2F30FHTA TZXMN2f30fh Anzahl je Verpackung: 25 Stücke |
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ZXMN2F30FHTA | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |