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ZXMN3A04DN8TA

ZXMN3A04DN8TA Diodes Incorporated

ZXMN3A04DN8.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+1.59 EUR
1000+ 1.35 EUR
2500+ 1.28 EUR
5000+ 1.24 EUR
12500+ 1.19 EUR
Mindestbestellmenge: 500
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Technische Details ZXMN3A04DN8TA Diodes Incorporated

Description: MOSFET 2N-CH 30V 6.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.81W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.5A, Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Active.

Weitere Produktangebote ZXMN3A04DN8TA nach Preis ab 1.53 EUR bis 3.01 EUR

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ZXMN3A04DN8TA ZXMN3A04DN8TA Hersteller : Diodes Incorporated ZXMN3A04DN8.pdf Description: MOSFET 2N-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.81W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 12.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 22603 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.85 EUR
10+ 2.37 EUR
100+ 1.88 EUR
Mindestbestellmenge: 7
ZXMN3A04DN8TA ZXMN3A04DN8TA Hersteller : Diodes Incorporated ZXMN3A04DN8.pdf MOSFET Dl 30V N-Chnl UMOS
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.01 EUR
10+ 2.71 EUR
100+ 2.18 EUR
500+ 1.8 EUR
1000+ 1.62 EUR
2500+ 1.56 EUR
5000+ 1.53 EUR
ZXMN3A04DN8TA ZXMN3A04DN8.pdf
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)