ZXMN3A06DN8TA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details ZXMN3A06DN8TA Diodes Incorporated
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 4.9A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.8W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote ZXMN3A06DN8TA nach Preis ab 0.83 EUR bis 2.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
ZXMN3A06DN8TA | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA (Min) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V Current - Continuous Drain (Id) @ 25°C: 4.9A Drain to Source Voltage (Vdss): 30V Power - Max: 1.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 514 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
ZXMN3A06DN8TA | Diodes Incorporated |
MOSFETs Dl 30V N-Chnl UMOS |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| ZXMN3A06DN8TA | Zetex |
Dual N-Channel 30 V 0.035 Ohm Power MOSFET ZXMN3A06DN8TA DIODES TZXMN3a06dn8 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
|
| ZXMN3A06DN8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.01 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.4 EUR |
| ZXMN3A06DN8TA |
|
Hersteller: Diodes Incorporated
MOSFETs Dl 30V N-Chnl UMOS
MOSFETs Dl 30V N-Chnl UMOS
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.24 EUR |
| 10+ | 1.5 EUR |
| 100+ | 1.22 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.83 EUR |
| ZXMN3A06DN8TA |
|
Hersteller: Zetex
Dual N-Channel 30 V 0.035 Ohm Power MOSFET ZXMN3A06DN8TA DIODES TZXMN3a06dn8
Anzahl je Verpackung: 10 Stücke
Dual N-Channel 30 V 0.035 Ohm Power MOSFET ZXMN3A06DN8TA DIODES TZXMN3a06dn8
Anzahl je Verpackung: 10 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 2.82 EUR |