ZXMN3A06DN8TA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 500+ | 1.38 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
500 Stücke
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Technische Details ZXMN3A06DN8TA Diodes Incorporated
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.9A, Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote ZXMN3A06DN8TA nach Preis ab 0.99 EUR bis 3.39 EUR
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ZXMN3A06DN8TA | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 514 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN3A06DN8TA | Diodes Incorporated |
MOSFETs Dl 30V N-Chnl UMOS |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| ZXMN3A06DN8TA | Zetex |
Dual N-Channel 30 V 0.035 Ohm Power MOSFET ZXMN3A06DN8TA DIODES TZXMN3a06dn8 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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| ZXMN3A06DN8TA |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 30V 4.9A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.39 EUR |
| 10+ | 2.14 EUR |
| 100+ | 1.67 EUR |
| ZXMN3A06DN8TA |
|
Hersteller: Diodes Incorporated
MOSFETs Dl 30V N-Chnl UMOS
MOSFETs Dl 30V N-Chnl UMOS
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.67 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.99 EUR |
| ZXMN3A06DN8TA |
|
Hersteller: Zetex
Dual N-Channel 30 V 0.035 Ohm Power MOSFET ZXMN3A06DN8TA DIODES TZXMN3a06dn8
Anzahl je Verpackung: 10 Stücke
Dual N-Channel 30 V 0.035 Ohm Power MOSFET ZXMN3A06DN8TA DIODES TZXMN3a06dn8
Anzahl je Verpackung: 10 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 3.39 EUR |