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ZXMN3A14FQTA DIODES INCORPORATED


ZXMN3A14FQ.pdf
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2678 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
97+0.88 EUR
118+0.73 EUR
172+0.5 EUR
500+0.46 EUR
Mindestbestellmenge: 97 Stücke
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Technische Details ZXMN3A14FQTA DIODES INCORPORATED

Description: MOSFET N-CH 30V 3.9A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V.

Weitere Produktangebote ZXMN3A14FQTA nach Preis ab 0.52 EUR bis 1.57 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
ZXMN3A14FQTA ZXMN3A14FQTA Diodes Incorporated ZXMN3A14FQ.pdf MOSFET MOSFET BVDSS 25V-30V
auf Bestellung 19671 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.45 EUR
10+1.29 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.62 EUR
3000+0.58 EUR
9000+0.52 EUR
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ZXMN3A14FQTA ZXMN3A14FQTA Diodes Incorporated ZXMN3A14FQ.pdf Description: MOSFET N-CH 30V 3.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.57 EUR
16+1.37 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.67 EUR
Mindestbestellmenge: 14 Stücke
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ZXMN3A14FQTA ZXMN3A14FQ.pdf
Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS 25V-30V
auf Bestellung 19671 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.45 EUR
10+1.29 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.62 EUR
3000+0.58 EUR
9000+0.52 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN3A14FQTA ZXMN3A14FQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.57 EUR
16+1.37 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.67 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH