ZXMN3A14FQTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 3.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.57 EUR |
| 16+ | 1.37 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.67 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
14 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details ZXMN3A14FQTA Diodes Incorporated
Description: MOSFET N-CH 30V 3.9A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V.
Weitere Produktangebote ZXMN3A14FQTA nach Preis ab 0.6 EUR bis 2.39 EUR
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ZXMN3A14FQTA | Diodes Incorporated |
MOSFETs MOSFET BVDSS 25V-30V |
auf Bestellung 5057 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN3A14FQTA | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 2678 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| ZXMN3A14FQTA |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS 25V-30V
MOSFETs MOSFET BVDSS 25V-30V
auf Bestellung 5057 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.39 EUR |
| 10+ | 1.12 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.8 EUR |
| 3000+ | 0.6 EUR |
| ZXMN3A14FQTA |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2678 Stücke:
Lieferzeit 14-21 Tag (e)