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ZXMN3A14FQTA

ZXMN3A14FQTA DIODES INCORPORATED

pVersion=0046&contRep=ZT&docId=005056AB82531EE986CBFFFD553CB8BF&compId=ZXMN3A14FQ.pdf?ci_sign=b9d314bde3938287f8305de683227e33ed925adc Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2752 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
118+0.61 EUR
164+0.44 EUR
172+0.42 EUR
174+0.41 EUR
500+0.4 EUR
Mindestbestellmenge: 97
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Technische Details ZXMN3A14FQTA DIODES INCORPORATED

Description: MOSFET N-CH 30V 3.9A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V.

Weitere Produktangebote ZXMN3A14FQTA nach Preis ab 0.44 EUR bis 1.32 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ZXMN3A14FQTA ZXMN3A14FQTA Hersteller : Diodes Incorporated ZXMN3A14FQ.pdf MOSFET MOSFET BVDSS 25V-30V
auf Bestellung 19671 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.22 EUR
10+1.08 EUR
100+0.83 EUR
500+0.65 EUR
1000+0.52 EUR
3000+0.49 EUR
9000+0.44 EUR
Mindestbestellmenge: 3
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ZXMN3A14FQTA ZXMN3A14FQTA Hersteller : Diodes Incorporated ZXMN3A14FQ.pdf Description: MOSFET N-CH 30V 3.9A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
16+1.15 EUR
100+0.89 EUR
500+0.7 EUR
1000+0.56 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN3A14FQTA ZXMN3A14FQTA Hersteller : Diodes Incorporated ZXMN3A14FQ.pdf Description: MOSFET N-CH 30V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
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