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ZXMN3B04N8TA

ZXMN3B04N8TA Diodes Incorporated

ZXMN3B04N8.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 7.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+1.04 EUR
1000+ 0.85 EUR
2500+ 0.8 EUR
5000+ 0.76 EUR
Mindestbestellmenge: 500
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Technische Details ZXMN3B04N8TA Diodes Incorporated

Description: MOSFET N-CH 30V 7.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V.

Weitere Produktangebote ZXMN3B04N8TA nach Preis ab 0.84 EUR bis 1.99 EUR

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Preis ohne MwSt
ZXMN3B04N8TA ZXMN3B04N8TA Hersteller : Diodes Incorporated ZXMN3B04N8.pdf Description: MOSFET N-CH 30V 7.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 15 V
auf Bestellung 9223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.92 EUR
12+ 1.57 EUR
100+ 1.22 EUR
Mindestbestellmenge: 10
ZXMN3B04N8TA ZXMN3B04N8TA Hersteller : Diodes Incorporated ZXMN3B04N8.pdf MOSFET 30V N-Chnl UMOS
auf Bestellung 4357 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.99 EUR
10+ 1.78 EUR
100+ 1.39 EUR
500+ 1.05 EUR
1000+ 0.9 EUR
2500+ 0.84 EUR
Mindestbestellmenge: 2
ZXMN3B04N8TA ZXMN3B04N8.pdf
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
ZXMN3B04N8TA ZXMN3B04N8TA Hersteller : Diodes Inc 1599497033027998zxmn3b04n8.pdf Trans MOSFET N-CH 30V 7.2A 8-Pin SOIC T/R
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