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ZXMN4A06KTC

ZXMN4A06KTC Diodes Incorporated

ZXMN4A06K.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 7.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 20 V
auf Bestellung 2205 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
11+1.75 EUR
100+1.22 EUR
500+1.03 EUR
1000+0.95 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ZXMN4A06KTC Diodes Incorporated

Description: MOSFET N-CH 40V 7.2A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V, Power Dissipation (Max): 2.15W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 20 V.

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ZXMN4A06KTC ZXMN4A06KTC Hersteller : Diodes Incorporated ZXMN4A06K.pdf MOSFET 40V 10.9A N-CHANNEL MOSFET
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.29 EUR
10+2.06 EUR
100+1.59 EUR
500+1.32 EUR
1000+1.04 EUR
2500+0.97 EUR
Mindestbestellmenge: 2
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ZXMN4A06KTC Hersteller : ZETEX ZXMN4A06K.pdf MOSFET N-CHAN 40V 10.9A DPAK
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+7.89 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN4A06KTC ZXMN4A06KTC Hersteller : Diodes Zetex zxmn4a06k.pdf Trans MOSFET N-CH 40V 7.2A 3-Pin(2+Tab) DPAK T/R
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ZXMN4A06KTC ZXMN4A06KTC Hersteller : Diodes Inc zxmn4a06k.pdf Trans MOSFET N-CH 40V 7.2A 3-Pin(2+Tab) DPAK T/R
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ZXMN4A06KTC ZXMN4A06KTC Hersteller : Diodes Incorporated ZXMN4A06K.pdf Description: MOSFET N-CH 40V 7.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.15W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 20 V
Produkt ist nicht verfügbar
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ZXMN4A06KTC ZXMN4A06KTC Hersteller : DIODES INCORPORATED ZXMN4A06K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.9A; 4.2W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.9A
Power dissipation: 4.2W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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