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ZXMN6A08E6TA

ZXMN6A08E6TA Diodes Incorporated


ZXMN6A08E6.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 2.8A SOT26
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
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Lieferzeit 10-14 Tag (e)
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100+0.79 EUR
500+0.62 EUR
1000+0.56 EUR
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Technische Details ZXMN6A08E6TA Diodes Incorporated

Description: MOSFET N-CH 60V 2.8A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V.

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ZXMN6A08E6TA ZXMN6A08E6.pdf
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ZXMN6A08E6TA
Produktcode: 124448
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ZXMN6A08E6.pdf Transistoren > MOSFET N-CH
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ZXMN6A08E6TA ZXMN6A08E6TA Hersteller : Diodes Zetex 33193629207549196zxmn6a08e6.pdf Trans MOSFET N-CH 60V 2.8A 6-Pin SOT-26 T/R
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ZXMN6A08E6TA ZXMN6A08E6TA Hersteller : Diodes Incorporated ZXMN6A08E6.pdf Description: MOSFET N-CH 60V 2.8A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
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ZXMN6A08E6TA ZXMN6A08E6TA Hersteller : Diodes Incorporated ZXMN6A08E6.pdf MOSFETs 60V N-Chnl UMOS
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ZXMN6A08E6TA Hersteller : DIODES INCORPORATED ZXMN6A08E6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; 1.1W; SOT26
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 1.1W
Case: SOT26
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of channel: enhancement
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