auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.45 EUR |
| 6000+ | 0.41 EUR |
Produktrezensionen
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Technische Details ZXMN6A08E6TA Diodes Zetex
Description: MOSFET N-CH 60V 2.8A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-26, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V.
Weitere Produktangebote ZXMN6A08E6TA nach Preis ab 0.41 EUR bis 1.58 EUR
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ZXMN6A08E6TA | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 60V 2.8A 6-Pin SOT-26 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A08E6TA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 2.8A 6-Pin SOT-26 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A08E6TA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 2.8A SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A08E6TA | Hersteller : Diodes Incorporated |
MOSFETs 60V N-Chnl UMOS |
auf Bestellung 7615 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A08E6TA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 2.8A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V |
auf Bestellung 7657 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A08E6TA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 2.8A 6-Pin SOT-26 T/R |
auf Bestellung 351 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A08E6TA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 2.8A 6-Pin SOT-26 T/R |
auf Bestellung 351 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A08E6TA | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 2.8A 6-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| ZXMN6A08E6TA | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 60V; 3.5A; 1.1W; SOT26; SMT Type of transistor: N-MOSFET Technology: MOSFET Polarisation: N Mounting: SMD Electrical mounting: SMT Case: SOT26 Gate charge: 5.8nC On-state resistance: 80mΩ Power dissipation: 1.1W Drain current: 3.5A Gate-source voltage: 20V Drain-source voltage: 60V Kind of channel: enhancement |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 316 Stücke: Lieferzeit 21-28 Tag (e) |
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ZXMN6A08E6TA Produktcode: 124448
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