ZXMN6A08GTA Diodes Zetex
| Anzahl | Preis |
|---|---|
| 1000+ | 0.41 EUR |
| 2000+ | 0.39 EUR |
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Technische Details ZXMN6A08GTA Diodes Zetex
Description: MOSFET N-CH 60V 3.8A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V.
Weitere Produktangebote ZXMN6A08GTA nach Preis ab 0.4 EUR bis 2.02 EUR
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ZXMN6A08GTA | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 60V 3.8A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A08GTA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 3.8A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A08GTA | Hersteller : Diodes Incorporated |
MOSFETs 60V 3.8A N-Channel MOSFET |
auf Bestellung 7714 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A08GTA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 3.8A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V |
auf Bestellung 6931 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A08GTA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 3.8A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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ZXMN6A08GTA | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.8A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.8A Power dissipation: 2W Case: SOT223 On-state resistance: 0.15Ω Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |