ZXMN6A09GQTA Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 1+ | 3.1 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.08 EUR |
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Technische Details ZXMN6A09GQTA Diodes Incorporated
Description: MOSFET N-CH 60V 5.4A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote ZXMN6A09GQTA nach Preis ab 1.2 EUR bis 3.45 EUR
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ZXMN6A09GQTA | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 60V 5.4A SOT223Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 683 Stücke: Lieferzeit 10-14 Tag (e) |
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