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ZXMN6A09GQTA

ZXMN6A09GQTA Diodes Incorporated

ZXMN6A09GQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 5.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.32 EUR
Mindestbestellmenge: 1000
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Technische Details ZXMN6A09GQTA Diodes Incorporated

Description: MOSFET N-CH 60V 5.4A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V.

Weitere Produktangebote ZXMN6A09GQTA nach Preis ab 1.15 EUR bis 2.9 EUR

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ZXMN6A09GQTA ZXMN6A09GQTA Hersteller : Diodes Incorporated ZXMN6A09GQ.pdf MOSFET MOSFET BVDSS: 41V-60V SOT223 T&R 1K
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.85 EUR
10+ 2.55 EUR
100+ 1.99 EUR
500+ 1.65 EUR
1000+ 1.3 EUR
2000+ 1.21 EUR
5000+ 1.15 EUR
ZXMN6A09GQTA ZXMN6A09GQTA Hersteller : Diodes Incorporated ZXMN6A09GQ.pdf Description: MOSFET N-CH 60V 5.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
auf Bestellung 1994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.9 EUR
10+ 2.59 EUR
100+ 2.02 EUR
500+ 1.67 EUR
Mindestbestellmenge: 7
ZXMN6A09GQTA Hersteller : Diodes Inc ZXMN6A09GQ.pdf MOSFET BVDSS: 41V60V SOT223 T&R 1K
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