Produkte > DIODES INCORPORATED > ZXMN6A09GQTA
ZXMN6A09GQTA

ZXMN6A09GQTA Diodes Incorporated

ZXMN6A09GQ.pdf Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V SOT223 T&R 1K
auf Bestellung 1109 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.1 EUR
10+2.18 EUR
100+1.5 EUR
500+1.2 EUR
1000+1.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details ZXMN6A09GQTA Diodes Incorporated

Description: MOSFET N-CH 60V 5.4A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote ZXMN6A09GQTA nach Preis ab 1 EUR bis 3.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ZXMN6A09GQTA ZXMN6A09GQTA Hersteller : Diodes Incorporated ZXMN6A09GQ.pdf Description: MOSFET N-CH 60V 5.4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.21 EUR
100+1.5 EUR
500+1.2 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A09GQTA Hersteller : DIODES INCORPORATED ZXMN6A09GQ.pdf Category: Transistors - Unclassified
Description: ZXMN6A09GQTA
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A09GQTA Hersteller : Diodes Inc ZXMN6A09GQ.pdf MOSFET BVDSS: 41V60V SOT223 T&R 1K
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ZXMN6A09GQTA ZXMN6A09GQTA Hersteller : Diodes Incorporated ZXMN6A09GQ.pdf Description: MOSFET N-CH 60V 5.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH