Technische Details ZXMN6A09KQTC Diodes Inc
Description: MOSFET N-CH 60V 11.8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V, Power Dissipation (Max): 10.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote ZXMN6A09KQTC
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ZXMN6A09KQTC | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 11.8A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 7.3A, 10V Power Dissipation (Max): 10.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1426 pF @ 30 V Qualification: AEC-Q101 |
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ZXMN6A09KQTC | Hersteller : Diodes Incorporated |
MOSFETs MOSFETBVDSS: 41V-60V |
Produkt ist nicht verfügbar |

