auf Bestellung 1397 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.61 EUR |
| 2500+ | 0.56 EUR |
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Technische Details ZXMN6A11DN8TA Diodes Incorporated
Description: MOSFET 2N-CH 60V 2.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 2.5A, Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V, Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote ZXMN6A11DN8TA nach Preis ab 0.90 EUR bis 2.16 EUR
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ZXMN6A11DN8TA | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 2.5A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 428 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A11DN8TA | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 3.2A 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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ZXMN6A11DN8TA | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 2.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
Produkt ist nicht verfügbar |