| Anzahl | Preis |
|---|---|
| 2+ | 2.09 EUR |
| 10+ | 1.31 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.61 EUR |
| 2500+ | 0.54 EUR |
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Technische Details ZXMN6A11DN8TA Diodes Incorporated
Description: DIODES INC. - ZXMN6A11DN8TA - Dual-MOSFET, n-Kanal, 60 V, 3.2 A, 0.18 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 3.2A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.18ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 2.1W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote ZXMN6A11DN8TA nach Preis ab 0.9 EUR bis 2.16 EUR
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ZXMN6A11DN8TA | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 2.5A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 428 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A11DN8TA | Hersteller : DIODES INC. |
Description: DIODES INC. - ZXMN6A11DN8TA - Dual-MOSFET, n-Kanal, 60 V, 3.2 A, 0.18 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.2A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.18ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2.1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 393 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN6A11DN8TA | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 2.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Active |
Produkt ist nicht verfügbar |