ZXMN6A25GTA Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 4.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.74 EUR |
| 2000+ | 0.69 EUR |
| 3000+ | 0.68 EUR |
| 5000+ | 0.67 EUR |
| 7000+ | 0.66 EUR |
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Technische Details ZXMN6A25GTA Diodes Incorporated
Description: MOSFET N-CH 60V 4.8A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V.
Weitere Produktangebote ZXMN6A25GTA nach Preis ab 0.68 EUR bis 2.66 EUR
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ZXMN6A25GTA | Hersteller : Diodes Incorporated |
MOSFET N-Chan 60V MOSFET (UMOS) |
auf Bestellung 12963 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN6A25GTA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 4.8A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.6A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1063 pF @ 30 V |
auf Bestellung 54847 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 3080 Stücke: Lieferzeit 21-28 Tag (e) |