
ZXMN7A11GTA Diodes Zetex
auf Bestellung 11000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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1000+ | 0.41 EUR |
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Technische Details ZXMN7A11GTA Diodes Zetex
Description: MOSFET N-CH 70V 2.7A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 70 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 40 V.
Weitere Produktangebote ZXMN7A11GTA nach Preis ab 0.36 EUR bis 1.99 EUR
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ZXMN7A11GTA | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 40 V |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN7A11GTA | Hersteller : Diodes Zetex |
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auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN7A11GTA | Hersteller : Diodes Zetex |
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auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN7A11GTA | Hersteller : Diodes Zetex |
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auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN7A11GTA | Hersteller : Diodes Incorporated |
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auf Bestellung 5620 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN7A11GTA | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 70V; 3A; 2W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 2W Case: SOT223 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 70V Drain current: 3A On-state resistance: 0.19Ω Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
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ZXMN7A11GTA | Hersteller : Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 40 V |
auf Bestellung 7186 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMN7A11GTA | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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ZXMN7A11GTA | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |
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ZXMN7A11GTA | Hersteller : Diodes Zetex |
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Produkt ist nicht verfügbar |