ZXMN7A11GTA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 70V 2.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±20V
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
| Anzahl | Preis |
|---|---|
| 1000+ | 0.6 EUR |
| 2000+ | 0.52 EUR |
| 3000+ | 0.5 EUR |
| 5000+ | 0.49 EUR |
| 7000+ | 0.48 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ZXMN7A11GTA Diodes Incorporated
Description: MOSFET N-CH 70V 2.7A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V, Drain to Source Voltage (Vdss): 70 V, Vgs (Max): ±20V, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-223-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote ZXMN7A11GTA nach Preis ab 0.5 EUR bis 1.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
ZXMN7A11GTA | Diodes Incorporated |
MOSFET 70V N-Channel 3.8A MOSFET |
auf Bestellung 5620 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
ZXMN7A11GTA | Diodes Incorporated |
Description: MOSFET N-CH 70V 2.7A SOT223 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-223-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V Drain to Source Voltage (Vdss): 70 V |
auf Bestellung 7186 Stücke: Lieferzeit 10-14 Tag (e) |
|
| ZXMN7A11GTA |
|
Hersteller: Diodes Incorporated
MOSFET 70V N-Channel 3.8A MOSFET
MOSFET 70V N-Channel 3.8A MOSFET
auf Bestellung 5620 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.37 EUR |
| 10+ | 1.22 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.59 EUR |
| 2000+ | 0.54 EUR |
| 5000+ | 0.5 EUR |
| ZXMN7A11GTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 70V 2.7A SOT223
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Description: MOSFET N-CH 70V 2.7A SOT223
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 298 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
auf Bestellung 7186 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 1.99 EUR |
| 14+ | 1.28 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.67 EUR |