Technische Details ZXMP4A16GQTA Diodes Zetex
Description: MOSFET P-CH 40V SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-223-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote ZXMP4A16GQTA nach Preis ab 0.65 EUR bis 2.76 EUR
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ZXMP4A16GQTA | Diodes Incorporated |
 Description: MOSFET P-CH 40V SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 49000 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP4A16GQTA | Diodes Incorporated |
MOSFETs MOSFET BVDSS |
auf Bestellung 572 Stücke: Lieferzeit 10-14 Tag (e) |
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ZXMP4A16GQTA | Diodes Incorporated |
Description: MOSFET P-CH 40V SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 49222 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 49000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.82 EUR |
| 2000+ | 0.76 EUR |
| 3000+ | 0.73 EUR |
| 5000+ | 0.68 EUR |
| 7000+ | 0.65 EUR |
| ZXMP4A16GQTA |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS
MOSFETs MOSFET BVDSS
auf Bestellung 572 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.43 EUR |
| 10+ | 1.62 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.8 EUR |
| 2000+ | 0.75 EUR |
| ZXMP4A16GQTA |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 40V SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1007 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 49222 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.76 EUR |
| 12+ | 1.75 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.9 EUR |